2SD1760 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor 50V, 3A

Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864
2SD1760 / 2SD1864
!Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1184 / 2SB1243.
!Structure
Epitaxial planar type
NPN silicon transistor
!External dimensions (Units : mm)
2SD1760
6.5±0.2
5.1
+0.2
−0.1
C0.5
2.3
+0.2
−0.1
0.5±0.1
2SD1864
6.8±0.2
2.5±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
0.55±0.1
1.0±0.2
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
Collector power 2SD1760
dissipation
2SD1864
PC
Junction temperature
Tj
3
A (DC)
4.5
A (Pulse) *1
15
W (Tc =25°C)*2
1
W
150
°C
Storage temperature
Tstg
−55~+150
°C
*1 Single pulse, PW = 100ms
*2 Printed circuit board, 1.7mm thick, collector copper plating 100mm² or larger.