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US5U38 Datasheet, PDF (2/6 Pages) Rohm – 2.5V Drive Pch+SBD MOSFET
◁
Transistor
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS=±12V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −20 −
−
V ID=−1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS=−20V, VGS=0V
Gate threshold voltage
VGS (th) −0.7 − −2.0 V VDS=−10V, ID=−1mA
−
Static drain-source on-state
resistance
∗
RDS (on)
−
−
280 390 mΩ ID=−1A, VGS=−4.5V
310 430 mΩ ID=−1A, VGS=−4.0V
570 800 mΩ ID=−0.5A, VGS=−2.5V
Forward transfer admittance
Yfs ∗ 0.7
−
−
S VDS=−10V, ID=−0.5A
Input capacitance
Ciss
− 150 − pF VDS=−10V
Output capacitance
Coss
−
20
−
pF VGS=0V
Reverse transfer capacitance Crss
− 20 − pF f=1MHz
Turn-on delay time
td (on) ∗
−
9
−
ns ID=−0.5A
Rise time
Turn-off delay time
Fall time
tr ∗ −
td (off) ∗
−
8
25
−
−
ns VDD −15V
VGS=−4.5V
ns RL 30Ω
tf ∗ −
10
−
ns RG=10Ω
Total gate charge
Qg ∗ −
2.1
−
nC ID=−1A, VDD −15V
Gate-source charge
Qgs ∗ −
0.5
−
nC VGS=−4.5V
Gate-drain charge
Qgd ∗ −
0.5
−
nC RL 15Ω, RG=10Ω
∗ Pulsed
<Body diode (source−drain)>
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD
−
− −1.2 V IS=−0.4A, VGS=0V
<Di >
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max. Unit
Conditions
VF
−
− 0.49 V IF=0.7A
IR
−
− 200 µA VR=20V
US5U38
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