US5U38 Datasheet, PDF (1/6 Pages) Rohm – 2.5V Drive Pch+SBD MOSFET

Transistor
2.5V Drive Pch+SBD MOSFET
US5U38
US5U38
zStructure
Silicon P-channel MOSFET
Schottky Barrier DIODE
zFeatures
1) The US5U38 combines Pch MOSFET with a
Schottky barrier diode in a TUMT5 package.
2) Low on-resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
zDimensions (Unit : mm)
TUMT5
2.0
1.3
Abbreviated symbol : U38
zApplications
Switching
zEquivalent circuit
(5)
(4)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
US5U38
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
ID
IDP ^∗1
Source current
(Body diode)
Continuous
Pulsed
IS
ISP ^∗1
Channel temperature
Tch
Power dissipation
PD ^∗3
Limits
−20
±12
±1.0
±4.0
−0.4
−4.0
150
0.7
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
VRM
25
VR
20
IF
0.7
IFSM ^∗2
3.0
Tj
150
PD ^∗3
0.5
<MOSFET AND Di>
Power dissipation
PD ^∗3
1.0
Range of storage temperature
Tstg
−55 to +150
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board
∗2
∗1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
Unit
V
V
A
A
A
A
°C
W / ELEMENT
V
V
A
A
°C
W / ELEMENT
W / TOTAL
°C
(1)Gate
(2)Source
(3) (3)Anode
(4)Cathode
(5)Drain
1/5