UMB4NTN Datasheet, PDF (2/7 Pages) Rohm – PNP -100mA -50V Complex Digital Transistors

EMB3 / UMB3N / IMB3A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation EMB3 / UMB3N
IMB3A
Junction temperature
Range of storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C(MAX.)*1
P_D ^*2
T_j
T_stg
Data Sheet
Values
Unit
-50
V
-50
V
-5
V
-100
mA
150 (Total)^*3
mW
300 (Total)^*4
mW
150
°C
-55 to +150
°C
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Collector-base breakdown voltage BV_CBO
Collector-emitter breakdown voltage BV_CEO
Emitter-base breakdown voltage
BV_EBO
Collector cut-off current
I_CBO
Emitter cut-off current
I_EBO
Collector-emitter saturation voltage V_CE(sat)
DC current gain
h_FE
Input resistance
R₁
Conditions
I_C= -50mA
I_C= -1mA
I_E= -50mA
V_CB = -50V
V_EB = -4V
I_C / I_B= -5mA / -0.25mA
V_CE= -5V , I_C= -1mA ,
-
Min.
-50
-50
-5
-
-
-
100
3.29
Transition frequency
f_T ^*1
V_CE = -10V, I_E = 5mA,
f = 100MHz
-
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Typ.
-
-
-
-
-
-
250
4.7
250
Max.
-
-
-
-0.5
-0.5
-0.3
600
6.11
-
Unit
V
V
V
mA
mA
V
-
kW
MHz
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2012.06 - Rev.C