UMB4NTN Datasheet, PDF (1/7 Pages) Rohm – PNP -100mA -50V Complex Digital Transistors

EMB3 / UMB3N / IMB3A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) ^Datasheet
Parameter
V_CEO
I_C(MAX.)
R₁
Tr1 and Tr2
-50V
-100mA
4.7kW
lFeatures
1) Built-In Biasing Resistors.
2) Two DTA143T chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
lOutline
EMT6
(6)
(5)
(1)
(4)
(2)
(3)
EMB3
(SC-107C)
SMT6
(4)
(5)
(6)
(3)
(2)
(1)
IMB3A
SOT-457 (SC-74)
lInner circuit
EMB3 / UMB3N
Collector
(6)
Base
(5)
Emitter
(4)
UMT6
(6)
(5)
(4)
(1)
(2)
(3)
UMB3N
SOT-353 (SC-88)
Collector
(4)
IMB3A
Base
(5)
Emitter
(6)
lApplication
Inverter circuit, Interface circuit, Driver circuit
(1)
Emitter
(2)
Base
(3)
Collector
(3)
Emitter
(2)
Base
(1)
Collector
lPackaging specifications
Part No.
Package
EMB3
UMB3N
IMB3A
EMT6
UMT6
SMT6
Package
size
(mm)
1616
2021
2928
Taping
code
T2R
TR
T108
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180
8
8,000
180
8
3,000
180
8
3,000
Marking
B3
B3
B3
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2012.06 - Rev.C