SH8K22 Datasheet, PDF (2/5 Pages) Rohm – 4V Drive Nch+Nch MOSFET

SH8K22
Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 45
−
Zero gate voltage drain current IDSS
−
−
−
V ID= 1mA, VGS=0V
1
μA VDS= 45V, VGS=0V
Gate threshold voltage
VGS (th) 1.0
−
2.5
V VDS= 10V, ID= 1mA
−
Static drain-source on-state
resistance
RDS (on)^∗
−
−
33 46 mΩ ID= 4.5A, VGS= 10V
41 57 mΩ ID= 4.5A, VGS= 4.5V
46 64 mΩ ID= 4.5A, VGS= 4.0V
Forward transfer admittance Yfs ^∗ 3.5 −
−
S VDS= 10V, ID= 4.5A
Input capacitance
Ciss
− 550 −
pF VDS= 10V
Output capacitance
Coss
− 140 −
pF VGS=0V
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ^∗ −
Rise time
tr ^∗ −
Turn-off delay time
td (off) ^∗ −
Fall time
Total gate charge
tf ^∗ −
Qg ^∗ −
Gate-source charge
Qgs ^∗ −
Gate-drain charge
Qgd ^∗ −
∗Pulsed
70 − pF f=1MHz
12
−
ns VDD 25V
18
−
ns ^{ID= 2.5A}
VGS= 10V
42
−
ns _{RL= 10Ω}
12
−
ns RG=10Ω
6.8 9.6 nC VDD 25V, VGS= 5V
2.0 − nC ID= 4.5A
2.9 − nC RL= 5.6Ω, RG= 10Ω
Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
* pulsed
Symbol
Min.
V_SD *
－
Typ.
－
Max.
1.2
Unit
Condition
V ^IS^=4.5A/VGS^=0V
Data Sheet
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2009.12 - Rev.A