SH8K22 Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Nch+Nch MOSFET

4V Drive Nch+Nch MOSFET
SH8K22
Structure
Silicon N-channel MOSFET
Features
1) Built-in G-S Protection Diode.
2) Small surface Mount Package (SOP8).
Application
Power switching, DC / DC converter, Inverter
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Type
SH8K22
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Chanel temperature
Range of Storage temperature
*1 PW  10ｓ、Duty cycle  1
V_DSS
45
V
V_GSS
±20
V
I_D
±4.5
A
I_{DP *1}
±18
A
I_S
1
A
I_{SP *1}
18
A
P_{D *2}
2
1.4
W / TOTAL
W / ELEMENT
T_ch
150
o_C
T_stg -55 to +150
o_C
*2 Mounted on a ceramic board
Inner circuit
(8) (7)
(6) (5) (8) (7) (6) (5)
∗2
∗2
(1) (2) (3) (4)
∗1
∗1
(1) (2)
(3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
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2009.12 - Rev.A