SH8K2 Datasheet, PDF (2/4 Pages) Rohm – 4V Drive Nch+Nch MOSFET

SH8K2
Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30
−
Zero gate voltage drain current IDSS
−
−
−
V ID=1mA, VGS=0V
1
μA VDS=30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0
−
2.5
V VDS=10V, ID=1mA
−
Static drain-source on-state
resistance
RDS
∗
(on)
−
−
21 30
ID=6.0A, VGS=10V
30 42 mΩ ID=6.0A, VGS=4.5V
33 47
ID=6.0A, VGS=4V
Forward transfer admittance
Yfs ^∗ 4.0
−
−
S ID=6.0A, VDS=10V
Input capacitance
Ciss
− 520 −
pF VDS=10V
Output capacitance
Coss
− 150 −
pF VGS=0V
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ^∗
−
Rise time
tr ^∗ −
Turn-off delay time
td (off) ^∗
−
Fall time
tf ^∗ −
Total gate charge
Qg ^∗ −
Gate-source charge
Qgs ^∗ −
Gate-drain charge
Qgd ^∗ −
∗Pulsed
95 − pF f=1MHz
9
−
ns ID=3A, VDD 15V
21
−
ns VGS=10V
36
−
ns RL=5Ω
13
−
ns RG =10Ω
7.2 10.1 nC VDD 15V
1.8 − nC VGS=5V
2.8 − nC ID=6.0A
Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ^∗
−
−
1.2
V IS=6.4A, VGS=0V
Data Sheet
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2009.12 - Rev.A