SH8K2 Datasheet, PDF (1/4 Pages) Rohm – 4V Drive Nch+Nch MOSFET

4V Drive Nch+Nch MOSFET
SH8K2
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SH8K2
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
Drain current
Continuous
Pulsed
ID
IDP ^∗1
±6.0
±24
A
A
Source current
Continuous
IS
1.6
A
(Body diode)
Pulsed
ISP ^∗1
6.4
A
Total power dissipation
PD ^∗2
2
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Pw 10μs, Duty cycle 1%
∗2 MOUNTED ON A CERAMIC BOARD.
Thermal resistance
Parameter
Channel to ambient
∗MOUNTED ON A CERAMIC BOARD.
Symbol
Rth (ch-a) ^∗
Limits
62.5
Unit
°C / W
Inner circuit
(8) (7)
(6) (5) (8) (7) (6) (5)
∗2
∗2
(1) (2) (3) (4)
∗1
∗1
(1) (2)
(3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
www.rohm.com
1/3
○^c 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A