SH8K12 Datasheet, PDF (2/7 Pages) Rohm – 4V Drive Nch + Nch MOSFET

SH8K12
 Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Symbol Min.
Gate-source leakage
I_GSS
-
Drain-source breakdown voltage V _(BR)DSS 30
Zero gate voltage drain current
I_DSS
-
Gate threshold voltage
V_{GS (th)}
1.0
Static drain-source on-state
resistance
-
R_DS
*
(on)
-
-
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
l Y_fs l* 2.5
C_iss
-
C_oss
-
C_rss
-
t_{d(on) *}
-
t_{r *}
-
t_{d(off) *}
-
t_f *
-
Q_g *
-
Q_gs *
-
Q_{gd *}
-
*Pulsed
　
Typ.
-
-
-
-
30
40
45
-
250
90
45
6
27
26
5
4.0
1.2
1.2
Max.
10
-
1
2.5
42
56
63
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
A V_GS=20V, V_DS=0V
V I_D=1mA, V_GS=0V
A V_DS=30V, V_GS=0V
V V_DS=10V, I_D=1mA
I_D=5.0A, V_GS=10V
m I_D=5.0A, V_GS=4.5V
I_D=5.0A, V_GS=4.0V
S I_D=5.0A, V_DS=10V
pF V_DS=10V
pF V_GS=0V
pF f=1MHz
ns I_D=2.5A, V_DD 15V
ns V_GS=10V
ns R_L=6
ns R_G=10
nC I_D=5.0A, V_DD 15V
nC V_GS=5V
nC
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward Voltage
Symbol Min.
V_SD *
-
Typ.
-
*Pulsed
Max. Unit
Conditions
1.2
V I_s=5.0A, V_GS=0V
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.02 - Rev.A