SH8K12 Datasheet, PDF (1/7 Pages) Rohm – 4V Drive Nch + Nch MOSFET

Data Sheet
4V Drive Nch + Nch MOSFET
SH8K12
 Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
 Dimensions (Unit : mm)
SOP8
(8)
(5)
(1)
(4)
 Application
Switching
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
SH8K12
Taping
TB
2500
○
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
P_D ^*2
Tch
Tstg
30
V
20
V
5.0
A
20
A
1.6
A
20
A
2.0
W / TOTAL
1.4 W / ELEMENT
150
C
55 to 150
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Inner circuit
(8)
(7) (6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗2
∗1
∗1
(1)
(2) (3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
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2011.02 - Rev.A