SH8J65_11 Datasheet, PDF (2/6 Pages) Rohm – 4V Drive Pch+Pch MOSFET

SH8J65
Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −30 −
Zero gate voltage drain current IDSS
−
−
−
V ID= −1mA, VGS=0V
−1 μA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) −1.0 − −2.5 V VDS= −10V, ID= −1mA
− 21.5 29.0 mΩ ID= −7A, VGS= −10V
Static drain-source on-state
resistance
RDS
∗
(on)
−
29.0 39.0 mΩ ID= −3.5A, VGS= −4.5V
∗
− 31.0 40.8 mΩ ID= −3.5A, VGS= −4.0V
∗
Forward transfer admittance
Yfs ^∗ 6.0
−
−
S VDS= −10V, ID= −7A
∗
Input capacitance
Ciss
− 1200 −
pF VDS= −10V
Output capacitance
Coss
− 170 −
Reverse transfer capacitance Crss
− 170 −
Turn-on delay time
td (on) ^∗ −
12
−
Rise time
tr ^∗ −
40
−
Turn-off delay time
td (off) ^∗ −
80
−
Fall time
tf ^∗ −
65
−
Total gate charge
Qg ^∗ −
18
−
Gate-source charge
Qgs ^∗ −
3.5
−
Gate-drain charge
Qgd ^∗ −
6.5
−
∗Pulsed
pF VGS=0V
pF f=1MHz
ns VDD −15V
ns ^{ID= −3.5A}
VGS= −10V
ns _RL=4.3Ω
ns RG=10Ω
nC VDD −15V
nC
ID= −7A
VGS= −5V
nC RL=2.1Ω / RG=10Ω
Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
VSD ^∗
−
− −1.2 V
Conditions
IS= −7A, VGS=0V
Data Sheet
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2011.10 - Rev.B