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SH8J65_11 Datasheet, PDF (1/6 Pages) Rohm – 4V Drive Pch+Pch MOSFET | |||
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4V Drive Pch+Pch MOSFET
SH8J65
ï¬Structure
Silicon P-channel MOSFET
ï¬Features
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
ï¬Application
Switching
ï¬Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
ï¬Packaging specifications
Type
SH8J65
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
ï¬Absolute maximum ratings (Ta=25ï°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Continuous
Pulsed
Continuous
Pulsed
Channel temperature
Range of Storage temperature
â1 Pwâ¤10μs, Duty cycleâ¤1%
â2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP â1
IS
ISP â1
PD â2
Tch
Tstg
Limits
â30
±20
±7.0
±28
â1.6
â28
2.0
1.4
150
â55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
ï¬Inner circuit
(8)
(7)
(6)
(5)
â2
â2
â1
â1
(1)
(2)
(3)
(4)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
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âc 2011 ROHM Co., Ltd. All rights reserved.
2011.10 - Rev.B
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