SCS308AP Datasheet, PDF (2/7 Pages) Rohm – SiC Schottky Barrier Diode

SCS308AP
Datasheet
Electrical characteristics (T_j = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
DC blocking voltage
V_DC I_R =50A
I_F=8A, T_j=25°C
650
-
-
V
-
1.35 1.50
V
Forward voltage
V_F I_F=8A, T_j=150°C
-
1.44 1.71
V
I_F=8A, T_j=175°C
V_R=650V, T_j=25°C
-
1.50
-
V
- 0.024 40
A
Reverse current
I_R
V_R=650V, T_j=150°C
-
1.6 160 A
V_R=650V, T_j=175°C
-
4.8
-
A
Total capacitance
V_R=1V, f=1MHz
C
V_R=650V, f=1MHz
-
400
-
pF
-
36
-
pF
Total capacitive charge
Switching time
Q_C V_R=400V, di/dt=350A/s -
21
-
nC
t_C
V_R=400V, di/dt=350A/s -
15
-
ns
Non-repetetive
Avaranche Energy
E_ava L=1mH
-
110
-
mJ
Thermal characteristics
Parameter
Thermal resistance
Symbol
R_th(j-c)
Conditions
-
Values
Unit
Min. Typ. Max.
-
1.8 2.6 °C/W
Typical Transient Thermal Characteristics
Symbol
Value
Unit
R_th1
1.89E-02
R_th2
1.81E-01
K/W
R_th3
1.55E+00
Symbol
C_th1
C_th2
C_th3
Value
1.95E-04
8.01E-04
1.82E-03
Unit
Ws/K
T_j R_th1
R_th,n
T_c
PD
C_th1
C_th2
C_th,n
T_a
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2017.07 - Rev.D