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SCS308AP Datasheet, PDF (1/7 Pages) Rohm – SiC Schottky Barrier Diode | |||
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SCS308AP
SiC Schottky Barrier Diode
VR
650V
IF
8A
QC
21nC
ï¬Features
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
4) High surge current capability
ï¬Construction
Silicon carbide epitaxial planar type
ï¬Outline
TO-220ACP
(1)
Datasheet
ï¬Inner circuit
(2) (3)
(1)
(1) Cathode
(2) Cathode
(3) Anode
(2)
(3)
ï¬Packaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Packing code
Marking
Tube
-
-
50
C9
SCS308AP
ï¬Absolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
VRM
650
V
Reverse voltage (DC)
VR
650
V
Continuous forward current
(Tc= 135°C)
IF
8
A
Surge non-
repetitive forward
current
PW=10ms sinusoidal, Tj=25°C
PW=10ms sinusoidal, Tj=150°C
PW=10ïs square, Tj=25°C
Repetitive peak forward current
i2t value
1â¦PWâ¦10ms, Tj=25°C
1â¦PWâ¦10ms, Tj=150°C
Total power disspation
IFSM
IFRM
â«i2dt
PD
67
A
57
A
250
A
36 *1
A
22
A2s
16
A2s
57 *2
W
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
*1 Tc=100°C, Tj=150°C, Duty cycle=10% *2 Tc=25°C
ï55 to ï«175
°C
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1/5
2017.07 - Rev.D
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