SCS302AP Datasheet, PDF (2/7 Pages) Rohm – SiC Schottky Barrier Diode

SCS302AP
Datasheet
Electrical characteristics (T_j = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
DC blocking voltage
V_DC I_R =10.8A
I_F=2A,T_j=25°C
650
-
-
V
-
1.35 1.50
V
Forward voltage
V_F I_F=2A,T_j=150°C
-
1.44 1.71
V
I_F=2A,T_j=175°C
-
1.50
-
V
V_R=650V,T_j=25°C
- 0.0065 10.8 A
Reverse current
I_R
V_R=650V,T_j=150°C
-
0.43 43
A
V_R=650V,T_j=175°C
-
1.29
-
A
Total capacitance
V_R=1V,f=1MHz
C
V_R=650V,f=1MHz
-
110
-
pF
-
10
-
pF
Total capacitive charge
Q_C V_R=400V,di/dt=350A/s -
6
-
nC
Switching time
t_C
V_R=400V,di/dt=350A/s -
11
-
ns
Non-repetetive
Avaranche Energy
E_ava L=1mH
-
18
-
mJ
Thermal characteristics
Parameter
Thermal resistance
Symbol
R_th(j-c)
Conditions
-
Values
Unit
Min. Typ. Max.
-
4.5 6.7 °C/W
Typical Transient Thermal Characteristics
Symbol
Value
Unit
R_th1
8.21E-02
R_th2
5.99E-01
K/W
R_th3
3.80E+00
Symbol
C_th1
C_th2
C_th3
Value
6.35E-05
2.10E-04
8.17E-04
Unit
Ws/K
T_j R_th1
R_th,n
T_c
PD
C_th1
C_th2
C_th,n
T_a
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2017.07 - Rev.B