SCS302AP Datasheet, PDF (1/7 Pages) Rohm – SiC Schottky Barrier Diode

SCS302AP
SiC Schottky Barrier Diode
V_R
650V
I_F
2A
Q_C
6nC
Features
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
4) High surge current capability
Construction
Silicon carbide epitaxial planar type
Outline
TO-220ACP
(1)
Datasheet
Inner circuit
(2) ⁽³⁾
(1)
(1) Cathode
(2) Cathode
(3) Anode
(2)
(3)
Packaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Packing code
Marking
Tube
-
-
50
C9
SCS302AP
Absolute maximum ratings (T_j = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
V_RM
650
V
Reverse voltage (DC)
V_R
650
V
Continuous forward current
(T_c= 145°C)
I_F
2
A
Surge non-
repetitive forward
current
PW=10ms sinusoidal, T_j=25°C
PW=10ms sinusoidal, T_j=150°C
PW=10s square, T_j=25°C
Repetitive peak forward current
i²t value
1≦PW≦10ms, T_j=25°C
1≦PW≦10ms, T_j=150°C
Total power disspation
I_FSM
I_FRM
∫i²dt
P_D
19
A
16
A
70
A
12 ^*1
A
1.8
A²s
1.2
A²s
22 ^*2
W
Junction temperature
T_j
175
°C
Range of storage temperature
T_stg
*1 T_c=100°C, T_j=150°C, Duty cycle=10% *2 T_c=25°C
55 to 175
°C
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2017.07 - Rev.B