RZL035P01 Datasheet, PDF (2/5 Pages) Rohm – 1.5V Drive Pch MOSFET

RZL035P01
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −12 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS= −12V, VGS=0V
Gate threshold voltage
VGS (th) −0.3 − −1.0 V VDS= −6V, ID= −1mA
Static drain-source on-state
resistance
−
RDS (on)^{∗ −}
−
26 36 mΩ ID= −3.5A, VGS= −4.5V
36 50 mΩ ID= −1.7A, VGS= −2.5V
46 69 mΩ ID= −1.7A, VGS= −1.8V
Forward transfer admittance
−
66 132 mΩ ID= −0.7A, VGS= −1.5V
Yfs ^∗ 5.5
−
−
S VDS= −6V, ID= −3.5A
Input capacitance
Ciss
− 1940 −
pF VDS= −6V
Output capacitance
Coss
− 260 −
pF VGS=0V
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ^∗ _−
Rise time
tr ^∗ _−
Turn-off delay time
td (off) ^∗ _−
Fall time
tf ^∗ _−
Total gate charge
Qg ^∗ −
Gate-source charge
Qgs ^∗ −
Gate-drain charge
Qgd ^∗ −
240 −
10 −
50 −
350 −
180 −
20 −
3.5 −
3.0 −
pF f=1MHz
ns VDD −6V
ns ^{ID= −1.7A}
VGS= −4.5V
ns _{RL 3.5Ω}
ns RG=10Ω
nC VDD −6V, ID= −3.5A
nC VGS= −4.5V
nC RL 1.7Ω, RG=10Ω
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VSD ^∗ −
− −1.2 V
∗ Pulsed
Conditions
IS= −3.5A, VGS=0V
Data Sheet
www.rohm.com
2/4
○^c 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A