RZL035P01 Datasheet, PDF (1/5 Pages) Rohm – 1.5V Drive Pch MOSFET

1.5V Drive Pch MOSFET
RZL035P01
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplication
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZL035P01
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
−12
V
Gate-source voltage
VGSS
±10
V
Drain current
Continuous
Pulsed
ID
IDP ^∗1
±3.5
±14
A
A
Source current
Continuous
IS
−0.8
A
(Body diode)
Pulsed
ISP ^∗1
−14
A
Total power dissipation
PD ^∗2
1.0
W
Channel temperature
Tch
150
°C
Range of Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board.
Symbol
Rth (ch-a) ^∗
Limits
125
Unit
°C / W
zDimensions (Unit : mm)
TUMT6
Abbreviated symbol : YB
zInner circuit
(6)
(5)
(4)
∗2
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗1
(1) Drain
(2) Drain
(3) Gate
(3) _{(4) Source}
(5) Drain
(6) Drain
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2009.12 - Rev.A