RZF030P01TL Datasheet, PDF (2/6 Pages) Rohm – 1.5V Drive Pch MOSFET

RZF030P01
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −12 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS= −12V, VGS=0V
Gate threshold voltage
VGS (th) −0.3 − −1.0 V VDS= −6V, ID= −1mA
−
28 39 mΩ ID= −3A, VGS= −4.5V
Static drain-source on-state
∗^−
resistance
RDS (on)
−
39 54 mΩ ID= −1.5A, VGS= −2.5V
51 76 mΩ ID= −1.5A, VGS= −1.8V
Forward transfer admittance
−
Yfs ^∗ 5
72 144 mΩ ID= −0.6A, VGS= −1.5V
−
−
S VDS= −6V, ID= −3A
Input capacitance
Ciss
− 1860 −
pF VDS= −6V
Output capacitance
Coss
− 210 −
pF VGS=0V
Reverse transfer capacitance Crss
− 200 −
Turn-on delay time
td (on) ^∗
−
9
−
Rise time
tr ^∗ −
40
−
Turn-off delay time
td (off) ^∗
−
210
−
Fall time
tf ^∗ − 120 −
Total gate charge
Qg ^∗ −
18
−
Gate-source charge
Qgs ^∗ −
3.0
−
Gate-drain charge
Qgd ^∗ −
2.5
−
pF f=1MHz
ns ID= −1.5A
ns ^{VDD −6V}
VGS= −4.5V
ns _{RL 4Ω}
ns RG=10Ω
nC VDD −6V RL 2Ω
nC ID= −3A
RG=10Ω
nC VGS= −4.5V
∗Pulsed
zBody diode characteristics (Source -drain) (Ta=25°C)
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ^∗
−
− −1.2 V IS= −3A, VGS=0V
Data Sheet
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2/5
2009.01 - Rev.A