RZF030P01TL Datasheet, PDF (1/6 Pages) Rohm – 1.5V Drive Pch MOSFET

1.5V Drive Pch MOSFET
RZF030P01
zStructure
Silicon P-channel
MOSFET
zDimensions (Unit : mm)
TUMT3
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplications
Switching
(1) Gate
(2) Source
(3) Drain
Abbreviated symbol : YD
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZF030P01
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS ^∗1
ISP
PD ^∗2
Tch
Tstg
Limits
−12
±10
±3
±12
−0.65
−12
0.8
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth(ch-a) ^∗
Limits
156
zEquivalent circuit
(3)
∗2
(1)
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C / W
www.rohm.com
○^c 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.01 - Rev.A