RZB002P02 Datasheet, PDF (2/6 Pages) Rohm – 1.2V Drive Pch MOSFET

RZB002P02
 Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
I_GSS
Drain-source breakdown voltage V _(BR)DSS
Zero gate voltage drain current
I_DSS
Gate threshold voltage
V_{GS (th)}
Static drain-source on-state
resistance
R_{DS (on}*₎
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Y_fs l*
C_iss
C_oss
C_rss
t_d(on)*
t_{r *}
t_d(off)*
t_f *
Q_g *
Q_gs *
Q_{gd *}
Min.
-
20
-
0.3
-
-
-
-
-
0.2
-
-
-
-
-
-
-
-
-
-
　
Data Sheet
Typ.
-
-
-
-
0.8
1.0
1.3
1.6
2.4
-
115
10
6
6
4
17
17
1.4
0.3
0.3
Max.
10
-
1
1.0
1.2
1.5
2.2
3.5
9.6
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
A V_GS=10V, V_DS=0V
V I_D=1mA, V_GS=0V
A V_DS=20V, V_GS=0V
V V_DS=10V, I_D=100A
I_D=200mA, V_GS=4.5V
I_D=100mA, V_GS=2.5V
 I_D=100mA, V_GS=1.8V
I_D=40mA, V_GS=1.5V
I_D=10mA, V_GS=1.2V
S I_D=200mA, V_DS=10V
pF V_DS=10V
pF V_GS=0V
pF f=1MHz
ns I_D=100mA, V_DD 10V
ns V_GS=4.5V
ns R_L=100
ns R_G=10
nC I_D=200mA, V_DD 10V
nC V_GS=4.5V
nC
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
V_SD *
-
-
*Pulsed
Max. Unit
Conditions
1.2
V I_s=200mA, V_GS=0V
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2010.11 - Rev.A