RZB002P02 Datasheet, PDF (1/6 Pages) Rohm – 1.2V Drive Pch MOSFET

1.2V Drive Pch MOSFET
RZB002P02
 Structure
Silicon P-channel MOSFET
Features
1) High speed switing.
2) Ultra small package(VMN3).
3) Ultra low voltage drive(1.2V drive).
 Application
Switching
 Dimensions (Unit : mm)
VMN3
0.22
(3)
0.16
(1)
(2)
0.17
0.37
0.35
0.6
Abbreviated symbol : YK
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RZB002P02
Taping
T2L
8000

 Inner circuit
(3)
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
20
V
V_GSS
10
V
I_D
200
mA
I_DP ^*1
800
mA
I_S
100
mA
I_SP ^*1
800
mA
P_D ^*2
150
mW
Tch
150
C
Tstg 55 to +150 C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
(1)
(2)
(1) GATE
(2) SOURCE
(3) DRAIN
 Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a recommended land.
Symbol
Rth (ch-a)^*
Limits
833
Unit
C / W
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2010.11 - Rev.A