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| RUU002N05 Datasheet, PDF (2/6 Pages) Rohm – 1.2V Drive Nch MOSFET | |||
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RUU002N05
ï¬Electrical characteristics (Ta = 25ï°C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
-
Drain-source breakdown voltage V(BR)DSS 50
Zero gate voltage drain current IDSS
-
Gate threshold voltage
VGS (th)
0.3
-
Static drain-source on-state
resistance
-
RDS (on*)
-
-
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
-
l Yfs l*
0.4
Ciss
-
Coss
-
Crss
-
td(on)*
-
tr *
-
td(off)*
-
tf *
-
*Pulsed
Typ.
-
-
-
-
1.6
1.7
1.9
2.0
2.4
-
25
6
3
4
6
15
55
Max.
ï±10
-
1
1.0
2.2
2.4
2.7
4.0
7.2
-
-
-
-
-
-
-
-
Unit
Conditions
ïA VGS=ï±8V, VDS=0V
V ID=1mA, VGS=0V
ïA VDS=50V, VGS=0V
V VDS=10V, ID=1mA
ID=200mA, VGS=4.5V
ID=200mA, VGS=2.5V
ï ID=100mA, VGS=1.8V
ID=40mA, VGS=1.5V
ID=20mA, VGS=1.2V
S ID=200mA, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=100mA, VDD 30V
ns VGS=4.5V
ns RL=300ï
ns RG=10ï
ï¬Body diode characteristics (Source-Drain) (Ta = 25ï°C)ï
Parameter
Symbol Min.
Typ.
Forward voltage
VSD *
-
-
*Pulsed
Max. Unit
Conditions
1.2
V Is=200mA, VGS=0V
Data Sheet
www.rohm.com
2/5
âc 2010 ROHM Co., Ltd. All rights reserved.
2010.01 - Rev.A
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