RUU002N05 Datasheet, PDF (1/6 Pages) Rohm – 1.2V Drive Nch MOSFET

1.2V Drive Nch MOSFET
RUU002N05
Structure
Silicon N-channel MOSFET
Features
1) High speed switing.
2) Small package(UMT3).
3) Ultra low voltage drive(1.2V drive).
Application
Switching



Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
RUU002N05
Taping
T106
3000

Dimensions (Unit : mm)
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Inner circuit
(3)
∗1
(1)
(1) GATE
(2) SOURCE
(3) DRAIN


Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
50
V
V_GSS
8
V
I_D
200
mA
I_DP ^*1
800
mA
I_S
150
I_SP ^*1
800
P_D ^*2
200
mA
mA
mW
Tch
150
C
Tstg 55 to +150 C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
∗2
(2)
∗1 BODY DIODE
∗2 ESD PROTECTION DIODE
Thermal resistance
Parameter
Channel to ambient
* Each terminal mounted on a recommended land.
Symbol
Rth (ch-a)^*
Limits
625
Unit
C / W
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2010.01 - Rev.A