RTR030P02FHA Datasheet, PDF (2/8 Pages) Rohm – 2.5V Drive Pch MOSFET

Transistors
RTRR0T3R00P3002PF0H2A
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS=±12V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −20 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS= −20V, VGS=0V
Gate threshold voltage
VGS (th) −0.7 − −2.0 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
−
RDS (on)^∗ −
−
55 75 mΩ ID= −3.0A, VGS= −4.5V
60 85 mΩ ID= −3.0A, VGS= −4.0V
90 125 mΩ ID= −1.5A, VGS= −2.5V
Forward transfer admittance
Yfs ^∗ 2.5
−
−
S VDS= −10V, ID= −1.5A
Input capacitance
Ciss
− 840 −
pF VDS= −10V
Output capacitance
Coss
− 140 −
pF VGS=0V
Reverse transfer capacitance Crss
− 100 −
Turn-on delay time
td (on) ^∗ _−
12
−
Rise time
tr ^∗ _−
20
−
Turn-off delay time
td (off) ^∗ _−
50
−
Fall time
tf ^∗ _−
20
−
pF f=1MHz
ns ID= −1.5A
ns
ns
VDD −15V
VGS= −4.5V
RL=10Ω
ns RG=10Ω
Total gate charge
Qg
− 9.3 − nC VDD −15V
Gate-source charge
Qgs
− 1.6 − nC VGS= −4.5V
Gate-drain charge
Qgd
− 2.6 − nC ID= −3.0A
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VSD
−
− −1.2 V IS= −0.8A, VGS=0V
Rev.A
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