RTR030P02FHA Datasheet, PDF (1/8 Pages) Rohm – 2.5V Drive Pch MOSFET

Transistors
2.5V Drive Pch MOS FET
RTR0300PP0022F_HA
RTRR0T3R00P3002PF2HA
AEC-Q101 Qualified
zStructure
Silicon P-channel
MOS FET
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
zApplication
Power switching, DC / DC converter.
zExternal dimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
1.0MAX
0.85
0.7
(1) (2)
0.95 0.95
1.9
0~0.1
0.16
(1) Gate
(2) Source
(3) Drain
Each lead has same dimensions
Abbreviated symbol : TV
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRTTRR003300PP0022FHA
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
−20
±12
±3.0
±12
−0.8
−3.2
1.0
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth (ch-a) ^∗
Limits
125
Unit
V
V
A
A
A
A
W
°C
°C
zEquivalent circuit
(3)
(1)
∗2
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
Unit
°C / W
Rev.A
1/4