RHU003N03 Datasheet, PDF (2/3 Pages) Rohm – 4V Drive Nch MOS FET

Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
−
Drain-source breakdown voltage V(BR) DSS 30
Zero gate voltage drain current IDSS
−
Gate threshold voltage
VGS (th) 1.0
−
Static drain-source on-state
resistance
RDS (on)^∗
−
−
Forward transfer admittance Yfs ^∗ 0.2
Input capacitance
Ciss
−
Output capacitance
Coss
−
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ^∗ −
Rise time
tr ^∗ −
Turn-off delay time
td (off) ^∗ −
Fall time
tf ^∗ −
∗Pulsed
Typ.
−
−
−
−
0.8
1.2
1.4
−
20
13
4
7
6
9
40
Max.
±10
−
1
2.5
1.2
1.9
2.3
−
−
−
−
−
−
−
−
Unit
Conditions
µA VGS=±20V, VDS=0V
V ID= 1mA, VGS=0V
µA VDS= 30V, VGS=0V
V VDS= 10V, ID= 1mA
Ω ID= 300mA, VGS= 10V
Ω ID= 300mA, VGS= 4.5V
Ω ID= 300mA, VGS= 4V
S VDS= 10V, ID= 300mA
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 15V
ns ^{ID= 150mA}
VGS= 10V
ns _RL=100Ω
ns RG=10Ω
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VSD
−
−
1.2
V IS= 0.16A, VGS=0V
RHU003N03
2/2