RHU003N03 Datasheet, PDF (1/3 Pages) Rohm – 4V Drive Nch MOS FET

Transistors
4V Drive Nch MOS FET
RHU003N03
RHU003N03
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) 4V drive.
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RHU003N03
Taping
T106
3000
zExternal dimensions (Unit : mm)
UMT3
2.0
0.3
(3)
0.9
0.2 0.7
(1) Source
(2) Gate
(3) Drain
(2)
(1)
0.65 0.65
1.3
0.15
Each lead has same dimensions
Abbreviated symbol : MN
zInner circuit
(3)
(2)
∗2
∗1
∗1 ESD PROTECTION DIODE (1)
∗2 BODY DIODE
(1) Source
(2) Gate
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
Symbol
VDSS
VGSS
ID
IDP ^∗1
PD ^∗2
Tch
Tstg
Limits
30
±20
±300
±1.2
200
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ^∗
Limits
625
Unit
V
V
mA
A
mW
°C
°C
Unit
°C/W
1/2