RHU002N06 Datasheet, PDF (2/5 Pages) Rohm – Switching (60V, 200mA)

Transistors
RHU002N06
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Gate leakage current
IGSS
−
Drain-source breakdown voltage V (BR) DSS ⁶⁰
Drain cutoff current
IDSS
−
Gate threshold voltage
VGS (th)
1
−
Drain-source on-state resistance RDS (on)^∗1
−
Forward transfer admittance
l Yfs l^∗1 100
Input capacitance
Ciss
−
Output capacitance
Coss
−
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
−
td (on)^∗2
−
tr^∗2
−
td (off)^∗2
−
tf^∗2
−
Qg^∗2
−
Qgs^∗2
−
Qgd^∗2
−
∗1 PW≤300µs, Duty cycle≤1%
∗2 Pulsed
Typ.
−
−
−
−
1.7
2.8
−
15
8
4
6
5
12
95
2.2
0.6
0.3
Max.
±10
−
1
2.5
2.4
4.0
−
−
−
−
−
−
−
−
4.4
−
−
Unit
Test Conditions
µA VGS=±20V, VDS=0V
V ID=10µA, VGS=0V
µA VDS=60V, VGS=0V
V VDS=10V, ID=1mA
ID=200mA, VGS=10V
Ω
ID=200mA, VGS=4V
mS VDS=10V, ID=200mA
pF _VDS=10V
pF VGS=0V
pF ^f=1MHz
ns _{ID=100mA, VDD 30V}
ns _VGS=10V
ns ^RL=300Ω
ns ^RGS=10Ω
nC _{VDD 30V}
nC VGS=10V
nC ^ID=200mA
zPackaging specifications
Package
Code
Type
Basic ordering unit (pieces)
RHU002N06
Taping
T106
3000
zElectrical characteristic curves
0.8
10V
0.7
8V
6V
0.6
Ta=25°C
Pulsed
0.5
4V
0.4
0.3
3.5V
0.2
VGS=3V
0.1
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Output Characteristics
1
VDS=10V
Pulsed
0.1
Ta=−25˚C
25˚C
75˚C
125˚C
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical Transfer Characteristics
2.5
VDS=10V
ID=1mA
Pulsed
2.0
1.5
1.0
0.5
0.0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate Threshold Voltage
vs. Channel Temperature
2/4