RHU002N06 Datasheet, PDF (1/5 Pages) Rohm – Switching (60V, 200mA)

Transistors
Switching (60V, 200mA)
RHU002N06
RHU002N06
zFeatures
1) Low on-resistance.
2) High ESD.
3) High-speed switching.
4) Low-voltage drive (4V).
5) Easily designed drive circuits.
6) Easy to use in parallel.
zStructure
Silicon N-channel
MOSFET transistor
zEquivalent circuit
(3)
zExternal dimensions (Unit : mm)
1.25
2.1
0.1Min.
Each lead has same dimensions
Abbreviated symbol : KP
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Source
(2) Gate
(3) Drain
(2)
∗^{Gate Protection Diode.}
(1)
(1) Source
(2) Gate
(3) Drain
∗ A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when fixed voltages are
exceeded.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
V
Continuous
ID
200
mA
Drain current
Pulsed
IDP ^∗1
800
mA
Continuous
IS
200
mA
Source current
Pulsed
ISP ^∗1
800
mA
Total power dissipation
PD ^∗2
200
mW
Channel temperature
Tch
150
˚C
Storage temperature
Tstg
−55 to +150
˚C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended
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