RHP030N03FRA Datasheet, PDF (2/6 Pages) Rohm – 4V Drive Nch MOSFET

RHP030N03 FRA
zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min.
Gate-source leakage
IGSS
−
Drain-source breakdown voltage V(BR) DSS 30
Zero gate voltage drain current IDSS
−
Gate threshold voltage
VGS (th) 1.0
Static drain-source on-state
resistance
RDS (on)^∗
−
−
Forward transfer admittance Yfs ^∗ 2.0
Input capacitance
Ciss
−
Output capacitance
Coss
−
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ^∗ −
Rise time
tr ^∗ −
Turn-off delay time
td (off) ^∗ −
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
tf ^∗ −
Qg ^∗ −
Qgs ^∗ −
Qgd ^∗ −
∗Pulsed
Typ.
−
−
−
−
90
160
−
160
90
27
7
11
15
4.5
6.5
1.0
1.5
Max.
±10
−
1
2.5
120
210
−
−
−
−
−
−
−
−
−
−
−
Unit
Conditions
μA VGS=±20V, VDS=0V
V ID= 1mA, VGS=0V
μA VDS= 30V, VGS=0V
V VDS= 10V, ID= 1mA
mΩ ID= 3A, VGS= 10V
mΩ ID= 3A, VGS= 4V
S VDS= 10V, ID= 3A
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 15V
ns ^{ID= 1.5A}
VGS= 10V
ns _RL=10Ω
ns RG=10Ω
nC VDD 15V
nC VGS= 10V
nC ID= 3A
Data Sheet
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