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RHP030N03FRA Datasheet, PDF (1/6 Pages) Rohm – 4V Drive Nch MOSFET
RHP030N03 FRA
4V Drive Nch MOSFET
Data Sheet
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) 4V drive.
zApplications
Switching
zDimensions (Unit : mm)
MPT3
SOT-89
4.5
1.6
AEC-Q101 Qualified
1.5
(1)Gate
(2)Drain
(3)Source
(1)
(2)
(3)
0.4
0.4
0.5
0.4
1.5 1.5
3.0
Abbreviated symbol : KZ
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RHP030N03 FRA
Taping
T100
1000
zInner circuit
(1) Gate
(2) Drain
(3) Source
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
Drain current
Continuous
ID
3
A
Pulsed
IDP ∗1
10
A
Reverse drain current
Continuous
IDR
3
A
Pulsed
IDRP ∗1
10
A
Total power dissipation
500
mW
PD
2 ∗2
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10μs, Duty cycle≤1%
∗2 When mounted on a 40×40×0.7mm ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a 40×40×0.7mm ceramic board
Symbol
Rth(ch-a)
Limits
250
62.5 ∗
Unit
°C/W
°C/W
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