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RFX10TF6S_11 Datasheet, PDF (2/4 Pages) Rohm – Super Fast Recovery Diode
RFX10TF6S
 
Electrical characteristics curves
100
Tj=125
Tj=150
10
Tj=25
Tj=75
1
1000000
100000
10000
1000
100
10
Tj=150C Tj=125C
Tj=75C
Tj=25C
0.1
0
1000
2000
3000
4000
5000
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
1
0 100 200 300 400 500 600
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
2300
2200
2100
2000
1900
1800
Tj=25C
IF=10A
n=20pcs
1000
100
10
AVE : 1976mV
1
Tj=25C
VR=600V
n=20pcs
AVE : 140.3nA
VF DISPERSION MAP
IR DISPERSION MAP
200
150
100
50
0
1000
100
10
1
AVE : 163.5A
IFSM
1cyc
8.3ms
IFSM DISRESION MAP
IFSM
time
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
30
25
Tj=25C
IF=0.5A
IR=1A
20
Irr=0.25×IR
n=10pcs
15
10
AVE : 15.8ns
5
0
trr DISPERSION MAP
10
8
6
AVE : 5.80kV
4
AVE : 1.08kV
2
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
Data Sheet
1000
100
f=1MHz
Tj=25C
10
0
250
240
230
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
Ta=25C
f=1MHz
VR=0V
n=10pcs
220
AVE : 224.6pF
210
200
1000
Ct DISPERSION MAP
100
10
IFSM
8.3ms 8.3ms
1cyc.
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
Rth(j-c)
1
0.1
0.001 0.01
0.1
1
10
100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
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2011.06 - Rev.A