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RFX10TF6S_11 Datasheet, PDF (1/4 Pages) Rohm – Super Fast Recovery Diode | |||
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Super Fast Recovery Diode
RFX10TF6S
ï¬Series
Ultra Fast Recovery
ï¬Dimensions (Unit : mm)
+0.3
-0.1
ï¬Applications
General rectification
RFX10
TF6S
+0.3
-0.1
+0.2
-0.1
ï¬Features
1)Single type.(TO-220)
2)High switching speed
3)Soft Recovery
ï¬Construction
Silicon epitaxial planer
(1)
(3)
+0.1
-0.05
Data Sheet
ï¬Structure
(1)
(3)
ï¬Absolute maximum ratings (Tc=25ï°C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
VRM
Duty ï£ 0.5
600
V
VR
Direct voltage
600
V
Io
60Hz half sin wave, Resistance load, Tc=57ï°C
10
A
Forward current surge peak
IFSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25ï°C
100
A
Junction temperature
Tj
Storage temperature
Tstg
150
ï°C
ï55 to ï«150
ï°C
ï¬Electrical characteristics (Tj=25ï°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Reverse recovery time
trr
Thermal Resistance
Rth(j-c)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Conditions
IF=10A
VR=600V
IF=0.5A,IR=1A,Irr=0.25ÃIR
junction to case
1/3
Min.
Typ.
Max.
Unit
-
2
2.5
V
-
0.15
10
ïA
-
16
30
ns
-
-
3.5
ï°C / W
2011.06 - Rev.A
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