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| RFUS20TM4S_11 Datasheet, PDF (2/4 Pages) Rohm – Super Fast Recovery Diode | |||
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RFUS20TM4S
ã
ï¬Electrical characteristic curves
Data Sheet
100
10
1
0.1
0
Tj=125ï°C
Tj=150ï°C
Tj=25ï°C
Tj=75ï°C
100000
10000
1000
100
Tj=150ï°C
Tj=125ï°C
Tj=75ï°C
500
1000
1500
2000
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10
Tj=25ï°C
2500
1
0 50 100 150 200 250 300 350 400 450
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1500
1450
1400
1350
1300
1250
1200
Tï½=25ï°C
IF=20A
n=20pcs
1000
100
AVE : 1373mV
10
1
VF DISPERSION MAP
Tï½=25ï°C
VR=430V
n=20pcs
AVE : 49.0nA
IR DISPERSION MAP
1000
100
10
0
400
390
380
370
360
350
f=1MHz
Tj=25ï°C
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
Ta=25ï°C
f=1MHz
VR=0V
n=10pcs
AVE : 372.3pF
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
10
1
30
25
20
15
AVE : 183A
10
IFSM
1cyc
5
8.3ms
0
IFSM DISRESION MAP
IFSM
time
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
7
6
5
4
3
2
1
0
100
AVE : 22.9ns
Tï½=25ï°C
IF=0.5A
IR=1A
Irr=0.25ÃIR
n=10pcs
trr DISPERSION MAP
AVE : 6.05kV
AVE : 0.93kV
C=200pF
R=0ï
C=100pF
R=1.5kï
ESD DISPERSION MAP
1000
100
10
IFSM
8.3ms 8.3ms
1cyc.
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
Rth(j-c)
1
0.1
0.001
0.01
0.1
1
10
100
TIME : t(s)
Rth-t CHARACTERISTICS
1000
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.06 - Rev.A
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