RFUS20TM4S_11 Datasheet, PDF (1/4 Pages) Rohm – Super Fast Recovery Diode

Super Fast Recovery Diode
RFUS20TM4S
Series
Ultra Fast Recovery
Dimensions (Unit : mm)
+0.3
−0.1
+0.3
−0.1
+0.2
−0.1
Applications
General rectification
Data Sheet
Structure
(1) (2) (3)
Features
1)Ultra low switching loss
2)High current overload capacity
3)Cathode common single type
Construction
+0.1
−0.05
Silicon epitaxial planer
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
V_RM
Reverse voltage
V_R
Conditions
Duty0.5
Direct voltage
Limits
Unit
430
V
430
V
Average rectified forward current
Io
60Hz half sin wave, Resistance load, Tc=68C
20
A
Forward current surge peak
Junction temperature
Storage temperature
I_FSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25 C
100
A
Tj
150
C
Tstg
55 to 150 C
Electrical characteristics (Tj=25C)
Parameter
Symbol
Forward voltage
V_F
Reverse current
I_R
Reverse recovery time
trr
Thermal resistance
Rth(j-c)
Conditions
I_F=20A
V_R=430V
I_F=0.5A,I_R=1A,Irr=0.25×I_R
junction to case
Min. Typ.
-
1.4
-
0.05
-
24
-
-
Max.
1.6
10
35
2
Unit
V
μA
ns
C/W
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2011.06 - Rev.A