RF601B2D Datasheet, PDF (2/4 Pages) Rohm – Fast recovery diodes

Diodes
zElectrical characteristic curves
10
Ta=150℃
1
Ta=125℃
Ta=75℃
0.1
0.01
Ta=25℃
Ta=-25℃
10000
1000
100
10
1
0.001
0 100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.1
0
890
100
TaT=a2=52℃5℃
IFI=F3=A3A
90
880
n=n3=03p0cpscs
80
70
870
60
50
860
40
AVE:859.4mV
30
850
AVE:859.4mV
20
10
840
0
VF DISPERSION MAP
RF601B2D
100
Ta=150℃ _Ta=125℃
f=1MHz
Ta=75℃
10
Ta=25℃
Ta=-25℃
1
50
100
150
200
0
10
20
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Ta=25℃
VR=200V
n=30pcs
AVAEV:4E.:640.6n0AnA
IR DISPERSION MAP
150
140
Ta=25℃
130
f=1MHz
VR=0V
120
n=10pcs
110
100
90
AVE:99.4pF
80
70
60
50
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
10
1
30
25
Ifsm
1cyc
20
8.3ms
15
10
AVE:126.0A
5
0
IFSM DISRESION MAP
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1000
100
Ifsm
8.3ms 8.3ms
1cyc
AVE:13.7ns
trr DISPERSION MAP
10
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Ifsm
t
100
Mounted on epoxy board
10
10
Rth(j-a)
8
6
Rth(j-c)
DC
D=1/2
Sin(θ＝180)
IM=100mA
IF=3A
4
1
1ms ^time
300us
10
TIME:t(ms)
0.1
100
0.001 0.01 0.1 1 10 100 1000
TIME:t(s)
IFSM-t CHARACTERISTICS
Rth-t CHARACTERISTICS
2
0
0
2
4
6
8
10
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.B
2/3