RF601B2D Datasheet, PDF (1/4 Pages) Rohm – Fast recovery diodes

Diodes
Fast recovery diodes
RF601B2D
RF601B2D
zApplications
General rectification
zFeatures
1) Power mold type. (CPD)
2) Ultra Low VF
3) Very fast recovery
4) Low switching loss
zConstruction
Silicon epitaxial planer
zExternal dimensions (Unit : mm)
6.5±0.2
5.1±0.2
　　　 0.1
C0.5
2.3±0.2
　　　 0.1
0.5±0.1
zLand size figure (Unit : mm)
6.0
1.6
1.6
①
0.9
（1） ^{（2）}
0.75
（3） 0.65±0.1
2.3±0.2 2.3±0.2
0.5±0.1
1.0±0.2
CPD 2.3 2.3
zStructure
ROHM : CPD
JEITA : SC-63
① Manufacture Date
zTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
φ1.55±0.1
　　　　　 0
0.4±0.1
TL
6.8±0.1
8.0±0.1
φ3.0±0.1
2.7±0.2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
200
V
Reverse voltage (DC)
V_R
200
V
Average rectified forward current (*1)
Io
6
A
Forward current surge peak （60Hz・1cyc） I_FSM
40
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55～+150
℃
(*1) Rating of per diode : Io/2
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
0.87 0.93
Reverse current
I_R
-
0.01 10
Reverse recovery time
trr
-
14
25
Thermal impedance
θjc
-
-
6.0
Unit
V
µA
ns
℃/W
Conditions
I_F=3A
V_R=200V
I_F=0.5A,I_R=1A,Irr=0.25*I_R
JUNCTION TO CASE
Rev.B
1/3