RF501PS2S Datasheet, PDF (2/4 Pages) Rohm – Fast recovery diode

Diodes
zElectrical characteristic curves
10
Ta=150℃
1
Ta=125℃
0.1
Ta=75℃
0.01
10000
1000
100
Ta=25℃
10
Ta=-25℃
1
0.001
0 100 200 300 400 500 600 700 800 900 100
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.1
0
890
100
Ta=25℃
ITFa==32A5℃
90
880
n=3IF0=p5cAs
80
n=30pcs
70
870
60
50
860
40
AVE:859.4mV
30
850
AVE:856.6mV
20
10
840
0
VF DISPERSION MAP
RF501PS2S
Ta=150℃ _Ta=125℃
1000
Ta=75℃
100
Ta=25℃
Ta=-25℃
10
f=1MHz
1
50
100
150
200
0
10
20
30
REVERSE VOLTAGE：VR(V)
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
VR-Ct CHARACTERISTICS
Ta=T2a5=℃25℃
VR=V2R0=02V00
n=30pcVs
n=30pcs
AVE:10.7nA
AVE:4.60nA
IR DISPERSION MAP
200
Ta=25℃
f=1MHz
190
VR=0V
n=10pcs
180
170
AVE:174.9pF
160
150
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
10
1
Ifsm
1cyc
8.3ms
AVE:167.0A
IFSM DISRESION MAP
Ifsm
t
30
Ta=25℃
25
IF=0.5A
IR=1A
Irr=0.25*IR
20
n=10pcs
15
10
AVE:14.5ns
5
0
trr DISPERSION MAP
1000
Mounted on epoxy board
IM=100mA
IF=2.5A
100
1ms time
300us
Rth(j-a)
10
Rth(j-c)
1000
100
10
Ifsm
8.3ms 8.3ms
1cyc
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
8
D=1/2
6
Sin(θ＝180)
4
DC
2
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1
0.001 0.01 0.1 1 10 100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
0
0
2
4
6
8
10
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
2/3