RF501PS2S Datasheet, PDF (1/4 Pages) Rohm – Fast recovery diode

Diodes
Fast recovery diode
RF501PS2S
RF501PS2S
zApplications
General rectification
zFeatures
1) High power mold type (TSOP8)
2) Low V_F
3) Very fast recovery
4) Low switching loss
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
(8) (7) (6) (5)
①
(1)
0.4 ^＋0.1
－0.05
(2) (3) (4)
5.0±0.1
0～0.1
0.22^＋ _{－00..015}
0.9±0.05
ROHM : TSOP8
① Manufacture Date
zTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
zLand size figure
4.56
1.27
0.75
TSOP8
zStructure
φ1.55±0.1
　　　　　 0
0.37±0.1
1PIN
6.7±0.2
φ1.55±0.05
1.2±0.2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
200
V
Reverse voltage (DC)
V_R
200
V
Average rectified forward current (*1)
Io
5
A
Forward current surge peak （60Hz・1cyc）
I_FSM
70
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55 to +150
℃
(*1) Mounted on epoxy board. 180°Half sine wave
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
Reverse current
I_R
Capacitance between terminals
trr
-
0.86 0.92
-
0.02 1
-
14 30
Unit
Conditions
V
I_F=5A
µA
V_R=200V
ns
I_F=0.5A,I_R=1A,Irr=0.25*I_R
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