RF4E100AJ Datasheet, PDF (2/15 Pages) Rohm – Nch 30V 10A Middle Power MOSFET

RF4E100AJ
　 　 　 　　 　
lThermal resistance
Parameter
Thermal resistance, junction - ambient
　 　 　 　 　 　 　 　 _Datasheet
　 　 　　　　　　　　　　　　　　　　
Symbol
R_thJA*3
Values
Unit
Min. Typ. Max.
-
- 62.5 ℃/W
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V_(BR)DSS V_GS = 0V, I_D = 1mA
Breakdown voltage
temperature coefficient
　^ΔV_(BR)DSS　 I_D = 1mA
　　 ΔT_j 　 　 referenced to 25℃
Zero gate voltage
drain current
I_DSS V_DS = 30V, V_GS = 0V
Gate - Source leakage current ^I_GSS V_GS = ±12V, V_DS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
V_GS(th) V_DS = V_GS, I_D = 1mA
　^ΔV_GS(th) 　 I_D = 1mA
　　 ΔT_j 　 　 referenced to 25℃
Static drain - source
on - state resistance
R_DS(on)*4 ^{VGS = 4.5V, ID = 10A}
V_GS = 2.5V, I_D = 5.0A
Gate resistance
R_{G f=1MHz, open drain}
Forward Transfer
Admittance
|Y_fs|^*4 V_DS = 5V, I_D = 3A
Values
Unit
Min. Typ. Max.
30 -
-
V
-
18
- mV/℃
-
-
1 μA
-
- ±100 nA
0.5 - 1.5 V
- -1.8 - mV/℃
- 9.4 12.4
mΩ
- 13.3 17.9
- 1.1 -
Ω
6.0 -
-
S
*1 Pw≦10μs , Duty cycle≦1%
*2 L ⋍ 1mH, V_DD = 15V, R_G = 25Ω, STARTING T_j = 25℃ Fig.3-1,3-2
*3 Mounted on a Cu Board (40×40×0.8mm)
*4 Pulsed
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　
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