RB876W_11 Datasheet, PDF (2/3 Pages) Rohm – Shottky barrier diode

RB876W
Data Sheet
10
1000
1
0.1
0.01
0
100
Ta=-25℃
Ta=25℃
Ta=75℃
10
Ta=125℃
1
300 600 900 1200 1500
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
1
2
3
4
5
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1
0.1
0
f=1MHz
1
2
3
4
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
300
300
1
Ta=25℃
Ta=25℃
0.9
Ta=25℃
290
IF=1mA
250
n=30pcs
VR=5V
n=30pcs
0.8
f=1MHz
VR=1V
0.7
n=10pcs
200
280
0.6
150
0.5
270
0.4
100
AVE:21.63uA
AVE:0.520pF
0.3
260
0.2
50
AVE:275.2mV
0.1
250
0
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1000
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IM=1mA
IF=10mA
1ms ^time
300us
10
0.001
0.01 0.1 _TIM1E:t(s) 10 100
Rth-t CHARACTERISTICS
1000
5
4
3
AVE:1.47kV
2
AVE:0.48kV
1
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.04 - Rev.B