RB876W_11 Datasheet, PDF (1/3 Pages) Rohm – Shottky barrier diode

Data Sheet
Shottky barrier diode
RB876W
Applications
High frequency detection
Dimensions (Unit : mm)
Features
1) Ultra small mold type. (EMD3)
2) Low Ct and high detection efficiency.
1.6± 0.2
0.3±0.1
　　　 0.05
(3)
0.15±0.05
0～0.1
Construction
Silicon epitaxial planar
0 .2± 0.1
(2)
(1)
　　- 0.05
0.5 0.5
1.0±0.1
0.55±0.1
0.7±0.1
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φφ1.15.55±00..1
　　　　　00
Land size figure (Unit : mm)
1.0
0.5 0.5
0.7
0.6 0.6
EMD3
Structure
0.3±0.1
1.8±0.1
φ0.5±0.1
0.9±0.2
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage
V_R
5
V
Average rectified forward current (*1)
Io
10
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
40 to 125
°C
(*1) Rating of per diode
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
V_F
-
-
0.35
I_R
-
-
120
Ct
-
0.53 0.80
Unit
Conditions
V
I_F=1mA
μA
V_R=5V
pF
V_R=1V, f=1MHz
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.04 - Rev.B