RB751S-40TE61 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

RB751S-40
Electrical characteristic curves
100
Ta=125℃
10 _Ta=75℃
1
Ta=-25℃
0.1
Ta=25℃
0.01
0 100 200 300 400 500 600 700 800 900 100
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
VF分布
300
Ta=25℃
290
IF=1mA
n=30pcs
280
270
260
AVE:267.4mV
250
VF DIPERSION MAP
1000
100
10
1
0.1
0.01
0.001
0
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
10
20
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
900
800
700
600
500
400
300
200
100
0
Ta=25℃
VR=30V
n=30pcs
AVE:185.5nA
IR DISPERSION MAP
Data Sheet
10
f=1MHz
1
0.1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
10
9
Ta=25℃
8
f=1MHz
VR=1V
7
n=10pcs
6
5
4
3
2
1
AVE:2.00pF
0
Ct DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10
5
AVE:7.30A
0
IFSM DISPERSION MAP
20
Ifsm
15
8.3ms 8.3ms
1cyc
10
5
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
9
8
Ifsm
t
7
6
5
4
3
2
1
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
10000 ^{Mounted on epoxy board}
IM=1mA
IF=10mA
1000
1ms ^time
300us
100
Rth(j-a)
Rth(j-c)
0.04
DC
0.03
D=1/2
Sin(θ＝180)
0.02
0.01
0.003
0.002
0.001
D=1/2
DC
Sin(θ＝180)
10
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0.00
0.00 0.01 0.02 0.03 0.04 0.05
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
0
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
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2011.03 - Rev.C