RB751S-40TE61 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Data Sheet
Schottky barrier diode
RB751S-40
Applications
Low current rectification
Dimensions (Unit : mm)
0.8±0.05
0.12±0.05
Land size figure (Unit : mm)
0.8
Features
1) Ultra small mold type. (EMD2)
2) Low VF
3) High reliability
Construction
Silicon epitaxial planar
0.3±0.05
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
Taping specifications(Unit : mm)
4.0±0.1
2.0±0.05
0.6±0.1
φ1.5±0.05
φ1.55±0.05
EMD2
Structure
0.2±0.05
0⁰.9^.90⁵±^±0.0⁰5^.06
0
E空mポptケy pッoトcket ^4.0±0.1
2.0±0.05
φ0.5
Absolute maximum ratings(Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
30
V
Average retified forward current
Io
30
mA
Forward currnt surge peak(60Hz/1cyc) I_FSM
200
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-40 to +125
°C
0.2
00.7.756±±0.005.05
Electrical characteristics(Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
-
0.37
Reverse current
I_R
-
-
0.5
Capacitance between terminals
Ct
-
2
-
Unit
Conditions
V
I_F=1mA
μA
V_R=30V
pF
V_R=1V , f=1MHz
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2011.03 - Rev.C