RB721Q-40T-77 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
zElectrical characteristic curves
100
Ta=125℃
10
Ta=75℃
1
Ta=-25℃
100000
10000
1000
100
Ta=125℃
Ta=75℃
Ta=25℃
10
0.1
Ta=25℃
Ta=-25℃
1
0.01
0
100 200 300 400 500 600 700 800
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.1
0
10
20
30
40
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
RB721Q-40
10
f=1MHz
1
0.1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
330
300
10
Ta=25℃
Ta=25℃
9
Ta=25℃
320
IF=1mA
250
n=30pcs
VR=25V
n=30pcs
8
f=1MHz
VR=1V
200
7
n=10pcs
310
6
AVE:310.7mV
300
150
100
AVE:54.0nA
5
4
AVE:2.07pF
3
290
50
2
1
280
0
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
15
Ifsm
1cyc
8.3ms
10
5
AVE:5.60A
0
IFSM DISRESION MAP
Mounted on epoxy board
IM=1mA
1000
IF=10mA
1ms time
300us
Rth(j-a)
Rth(j-l)
100
Rth(j-c)
10
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
10
Ifsm
8.3ms 8.3ms
1cyc
5
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
8
Ifsm
t
6
4
2
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.05
0.005
D=1/2
0.04
0.004
0.03
Sin(θ＝180)
0.02
DC
0.01
0.003
0.002
0.001
0
0
0 0.01 0.02 0.03 0.04 0.05
0
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Sin(θ＝180)
D=1/2
DC
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-P_R CHARACTERISTICS
Rev.B
2/3