RB721Q-40T-77 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB721Q-40
RB721Q-40
zApplications
Low current rectification
zExternal dimensions (Unit : mm)
CATHODE BAND (BLACK)
TYPE NO. (BLACK)
zFeatures
1) Glass sealed envelope. (MSD)
2) Low VF, Low IR
3) High reliability
29±1
S
2
-
2.7±0.3
φ0.4±0.1
29±1
ROHM : MSD
JEDEC : DO-34
φ1.8±0.2
zConstruction
Silicon epitaxial planar
zTaping specification s (Unit : mm)
H2
A
BLUE
E
L1
H1
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak （60Hz・1cyc）
Junction temperature
Storage temperature
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
L2
F
Limits
40
40
30
200
125
-40 to +125
BROWN
Symbol
Standard dimension
value(mm)
T-72 52.4±1.5
Ａ _{T-77 26.0} +0.4
0
B
C
D
B ^{T-72 5.0±0.5}
T-77 5.0±0.3
C ^T-72 1.0 max.
T-77
D ^T-72
0
T-77
E ^{T-72 1/2A±1.2}
T-77 1/2A±0.4
Ｆ ^{T-72 0.7 max.}
T-77 0.2 max.
H1 ^T-72 6.0±0.5
T-77
H2 ^T-72 5.0±0.5
T-77
|L1-L2| ^T-72
T-77
1.5 max.
0.4 max.
＊H1(6mm)：BROWN
Unit
V
V
mA
mA
℃
℃
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
Reverse current
I_R
Capacitance between terminals
Ct
-
-
0.37
-
-
0.5
-
2.0
-
Unit
Conditions
V
I_F=1mA
µA
V_R=25V
pF
V_R=1V , f=1MHz
Rev.B
1/3