RB550VA-30_1 Datasheet, PDF (2/4 Pages) Rohm – Schottky barrier diode

Diodes
RB550VA-30
zElectrical characteristic curves
1
Ta=75℃
Ta=125℃
0.1 _Ta=150℃
0.01
Ta=25℃
Ta=-25℃
100000
10000
1000
100
10
1
0.1
0.001
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.01
0
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5 10 15 20 25 30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
f=1MHz
10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
490
30
200
480
Ta=25℃
IF=0.7A
n=30pcs
25
Ta=25℃
190
VR=30V
n=30pcs
180
170
20
470
160
15
150
460
450
AVE:459.6mV
440
140
10
130
AVE:3.141uA
5
120
110
0
100
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:149.9pF
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
30
30
25
Ifsm
1cyc
25
20
8.3ms
20
15
15
20
Ta=25℃
IF=0.5A
IR=1A
15
Irr=0.25*IR
n=10pcs
10
Ifsm ^Ifsm
8.3⁸m^.3s^ms 8⁸.^.3^3mm^ss
1c^1cy^yc^c
10
AVE:15.1A
10
5
5
5
AVE:8.3ns
0
IFSM DISRESION MAP
0
trr DISPERSION MAP
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
30
1000 ^{Mounted on epoxy board}
1
IM=10mA
IF=0.2A
25
Ifsm
t
0.8
20
1ms ^time
Rth(j-a)
D=1/2
300us
0.6
15
Sin(θ＝180)
100
Rth(j-c)
0.4
DC
10
5
0.2
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
10
0
0.001
0.1TIME:t(s) 10
1000
0
0.5
1
AVERAGE RECTIFIED
1.5
Rth-t CHARACTERISTICS
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.D
2/3