RB550VA-30_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB550VA-30
RB550VA-30
zApplications
General rectification
zFeatures
1) Small mold type (TUMD2)
2) Low VF, Low IR
3) High reliability
zStructure
Silicon epitaxial planar
zDimensions (Unit : mm)
1.3±0.05
0.17±0.1
　　 0.05
zLand size figure (Unit : mm)
1.1
0.8±0.05
ROHM : TUMD2
0.6±0.2
　　　 0.1
dot (year week factory) + day
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
　　　　　 0
TUMD2
zStructure
0.25±0.05
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak) V_RM
Reverse voltage (DC)
V_R
Average rectified forward current
Io
Forward current surge peak
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
1.43±0.05
4.0±0.1
φ1.0±0.2
　　　　　0
Limits
Unit
30
V
30
V
1
A
3
A
150
℃
-40 to +150
℃
0.9±0.08
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F1
-
0.45 0.49
V_F2
-
0.48 0.52
I_R
-
1
30
Unit
Conditions
V
I_F=700mA
V
I_F=1A
µA
V_R=10V
Rev.D
1/3